Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices

Autor(es)

Simon, R. A. ^[1] ; Kamimura, H. ^[1] ; Berengue, O. M. ^[2] ; Leite, E. R. ^[3] ; Chiquito, A. J. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, NanO LaB, Dept Fis, BR-13565905 Sao Paulo - Brazil

^[2] Univ Estadual Paulista, Fac Engn Guaratingueta, Dept Fis & Quim, BR-12516410 Sao Paulo - Brazil

^[3] Univ Fed Sao Carlos, Lab Interdisciplinar Eletroquim & Ceram, Dept Quim, BR-13565905 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Applied Physics; v. 114, n. 24 DEC 28 2013.
• Citações Web of Science: 6

Resumo

It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states. (C) 2013 AIP Publishing LLC. (AU)

• Processo FAPESP: 09/51740-9 - Propriedades eletrônicas em nanoestruturas: nanofios de óxidos metálicos
• Beneficiário: Adenilson José Chiquito
• Modalidade de apoio: Auxílio à Pesquisa - Regular