| Full text | |
| Author(s): |
Total Authors: 5
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| Affiliation: | [1] Univ Fed Sao Carlos, NanO LaB, Dept Fis, BR-13565905 Sao Paulo - Brazil
[2] Univ Estadual Paulista, Fac Engn Guaratingueta, Dept Fis & Quim, BR-12516410 Sao Paulo - Brazil
[3] Univ Fed Sao Carlos, Lab Interdisciplinar Eletroquim & Ceram, Dept Quim, BR-13565905 Sao Paulo - Brazil
Total Affiliations: 3
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| Document type: | Journal article |
| Source: | Journal of Applied Physics; v. 114, n. 24 DEC 28 2013. |
| Web of Science Citations: | 6 |
| Abstract | |
It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states. (C) 2013 AIP Publishing LLC. (AU) | |
| FAPESP's process: | 09/51740-9 - Electron properties in nanostructures: metallic oxide nanowires |
| Grantee: | Adenilson José Chiquito |
| Support Opportunities: | Regular Research Grants |