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Developing a printed Schottky diode for UV photodetection using graphene and ZnO

Grant number: 16/18871-6
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): December 01, 2016
Effective date (End): January 31, 2018
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Neri Alves
Grantee:Douglas Henrique Vieira
Home Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil

Abstract

Actually UV sensors are in featured due to the growth of the hole in the ozone layer and the evils that come with increased exposure of this radiation. It's a technological and social interest the production of UV sensors that can be printed, for example, in smart packaging, article of clothes or adornments. In this context, the challenge of the printed electronics is develop UV sensors that have good responsivity, low cost and which can be printed. For this purpose its necessary obtain semiconductors with high mobility to form films with good morphology when printed, resulting in good uniformity and reproducibility of the devices. Many semiconductors can be used to printing, among them, we highlight the graphene and the ZnO whose electrical and optical properties permit their use as UV photodetectors. The graphene has high optical transparence, electrical conductivity and chemical stability, the ZnO provides the advantage of a high mobility and the fact of present a wide UV absorption due to its bandgap energy be 3,35 eV. Both materials can be printed by spray technique, it's possible to form a Schottky diode hybrid compound of ZnO and Graphene printed junction. This project proposes investigation of the Schottky diode proprieties as their morphology, structural, optical and electrical characteristics, as well as photosensitivity in the presence of UV. (AU)