Compensation effect on the CW spin-polarization degree of Mn-based structures

Autor(es)

Balanta, M. A. G. ^[1] ; Brasil, M. J. S. P. ^[1] ; Iikawa, F. ^[1] ; Mendes, U. C. ^[1] ; Brum, J. A. ^[1] ; Maialle, M. Z. ^[2] ; Danilov, Yu A. ^[3] ; Vikhrova, O. V. ^[3] ; Zvonkov, B. N. ^[3]

Afiliação do(s) autor(es)

^[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

^[2] Univ Estadual Campinas, Fac Ciencias Aplicadas, BR-1344350 Limeira, SP - Brazil

^[3] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod - Russia

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 46, n. 21 MAY 29 2013.
• Citações Web of Science: 4

Resumo

We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-doping concentrations. We observe a strong influence of the Mn layer for both the electron lifetime and its spin-relaxation time for high-Mn concentrations, when the electrons significantly overlap with Mn ions. Our results also show that the circular-polarization degree obtained by simple continuous-wave PL measurements is not sufficient to determine the relaxation dynamics due to a compensation effect of the lifetime and the spin-relaxation time. (AU)

• Processo FAPESP: 11/20985-6 - Spin de portadores em estruturas semicondutoras investigado por técnicas ópticas
• Beneficiário: Maria José Santos Pompeu Brasil
• Modalidade de apoio: Auxílio à Pesquisa - Regular