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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Compensation effect on the CW spin-polarization degree of Mn-based structures

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Author(s):
Balanta, M. A. G. [1] ; Brasil, M. J. S. P. [1] ; Iikawa, F. [1] ; Mendes, U. C. [1] ; Brum, J. A. [1] ; Maialle, M. Z. [2] ; Danilov, Yu A. [3] ; Vikhrova, O. V. [3] ; Zvonkov, B. N. [3]
Total Authors: 9
Affiliation:
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
[2] Univ Estadual Campinas, Fac Ciencias Aplicadas, BR-1344350 Limeira, SP - Brazil
[3] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod - Russia
Total Affiliations: 3
Document type: Journal article
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 46, n. 21 MAY 29 2013.
Web of Science Citations: 4
Abstract

We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-doping concentrations. We observe a strong influence of the Mn layer for both the electron lifetime and its spin-relaxation time for high-Mn concentrations, when the electrons significantly overlap with Mn ions. Our results also show that the circular-polarization degree obtained by simple continuous-wave PL measurements is not sufficient to determine the relaxation dynamics due to a compensation effect of the lifetime and the spin-relaxation time. (AU)

FAPESP's process: 11/20985-6 - Spin of carriers in semiconductor structures investigated by optical techniques
Grantee:Maria José Santos Pompeu Brasil
Support Opportunities: Regular Research Grants