Barrier coating for polymer light-emitting diodes using carbon nitride thin films deposited at low temperature by PECVD technique

Autor(es)

Nardes, A. M. ^[1] ; Dirani, E. A. T. ; Bianchi, R. F. ; Neves, J. A. R. ; Andrade, A. M. ; Faria, R. M. ; Fonseca, F. J.

Afiliação do(s) autor(es)

^[1] Universidade de São Paulo (USP). Escola Politécnica - Brasil

• Tipo de documento: Artigo Científico
• Fonte: Materials Science & Engineering C-Materials for Biological Applications; v. 24, n. 5, p. 607-610, Nov. 2004.
• Área do conhecimento: Engenharias - Engenharia Elétrica
• Assunto(s): Dispositivos eletrônicos Diodos Filmes finos Polímeros (materiais) Carbono

Resumo

In this work, a plasma-enhanced chemical vapor deposition (PECVD) system was used to deposit carbon nitride at low deposition temperatures (ca. 100 8C) to improve the lifetime of polymer light-emitting diodes (PLEDs) and to decrease photo-degradation of MEH-PPV (poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinilene]) in air. The characteristics of the carbon nitride and MEH-PPV films are investigated with FTIR and UV-Visible spectroscopies, with particular emphasis on the degradation process of MEH-PPV under illumination. It was shown by absorbance measurements that the coating protects the polymer film since the damage caused by photooxidation diminishes considerably. Current vs. voltage curves for PLEDs also indicated that the protection of a carbon nitride layer enhances the device lifetime. (AU)

• Processo FAPESP: 02/11941-6 - Estudo da degradação em dispositivos poliméricos eletroluminescentes
• Beneficiário: Alexandre Mantovani Nardes
• Modalidade de apoio: Bolsas no Brasil - Doutorado