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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Barrier coating for polymer light-emitting diodes using carbon nitride thin films deposited at low temperature by PECVD technique

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Author(s):
Nardes, A. M. [1] ; Dirani, E. A. T. ; Bianchi, R. F. ; Neves, J. A. R. ; Andrade, A. M. ; Faria, R. M. ; Fonseca, F. J.
Total Authors: 7
Affiliation:
[1] Universidade de São Paulo (USP). Escola Politécnica - Brasil
Total Affiliations: 7
Document type: Journal article
Source: Materials Science & Engineering C-Materials for Biological Applications; v. 24, n. 5, p. 607-610, Nov. 2004.
Field of knowledge: Engineering - Electrical Engineering
Abstract

In this work, a plasma-enhanced chemical vapor deposition (PECVD) system was used to deposit carbon nitride at low deposition temperatures (ca. 100 8C) to improve the lifetime of polymer light-emitting diodes (PLEDs) and to decrease photo-degradation of MEH-PPV (poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinilene]) in air. The characteristics of the carbon nitride and MEH-PPV films are investigated with FTIR and UV-Visible spectroscopies, with particular emphasis on the degradation process of MEH-PPV under illumination. It was shown by absorbance measurements that the coating protects the polymer film since the damage caused by photooxidation diminishes considerably. Current vs. voltage curves for PLEDs also indicated that the protection of a carbon nitride layer enhances the device lifetime. (AU)