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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

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Autor(es):
Cavallari, Marco Roberto [1] ; Zanchin, Vinicius Ramos [1] ; Pojar, Mariana [1] ; Seabra, Antonio Carlos [1] ; Pereira-da-Silva, Marcelo De Assumpcao [2, 3] ; Fonseca, Fernando Josepetti [1] ; De Andrade, Adnei Melges [4]
Número total de Autores: 7
Afiliação do(s) autor(es):
[1] Univ Sao Paulo EPUSP, Dept Engn Sistemas Eletron, Escola Politecn, BR-05508900 Sao Paulo - Brazil
[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13566590 Sao Carlos, SP - Brazil
[3] UNICEP, Ctr Univ Cent Paulista, BR-13563470 Sao Carlos, SP - Brazil
[4] Univ Sao Paulo, IEE, BR-05508970 Sao Paulo - Brazil
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: JOURNAL OF ELECTRONIC MATERIALS; v. 43, n. 5, p. 1317-1325, MAY 2014.
Citações Web of Science: 5
Resumo

A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120 A degrees C and 1 kgf/cm(2) for 2 min, followed by a 10 min post-baking at 100 A degrees C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-kappa titanium oxynitride (TiO (x) N (y) ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon (similar to 0.01 cm(2)/V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media. (AU)

Processo FAPESP: 09/05589-7 - Estudo e desenvolvimento de LEDs orgânicos, células solares, transistores de filmes finos e sensores baseados em polímeros semicondutores
Beneficiário:Adnei Melges de Andrade
Linha de fomento: Auxílio à Pesquisa - Regular