Photocurrent-voltage relation of resonant tunneling diode photodetectors

Autor(es)

Pfenning, Andreas ^[1] ; Hartmann, Fabian ^[1] ; Dias, Mariama Rebello Sousa ^[2] ; Langer, Fabian ^[1] ; Kamp, Martin ^[1] ; Castelano, Leonardo Kleber ^[2] ; Lopez-Richard, Victor ^[2] ; Marques, Gilmar Eugenio ^[2] ; Hoefling, Sven ^{[3, 1]} ; Worschech, Lukas ^[1]

Afiliação do(s) autor(es)

^[1] Univ Wurzburg, Tech Phys & Wilhelm Conrad Rontgen Res Ctr Comple, Inst Phys, D-97074 Wurzburg - Germany

^[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[3] Univ St Andrews, SUPA, Sch Phys & Astron, St Andrews KY16 9SS, Fife - Scotland

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 107, n. 8 AUG 24 2015.
• Citações Web of Science: 15

Resumo

We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength lambda = 1.3 mu m lead to hole accumulation close to the double barrier inducing a voltage shift Delta V(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing Delta V(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency eta(V), the lifetime of photogenerated and accumulated charge carriers tau(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed. (C) 2015 AIP Publishing LLC. (AU)

• Processo FAPESP: 12/13052-6 - Propriedades de transporte e computação quântica em nanoestruturas
• Beneficiário: Leonardo Kleber Castelano
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 12/51415-3 - Network for nano-optics and nano-electronics
• Beneficiário: Victor Lopez Richard
• Modalidade de apoio: Auxílio à Pesquisa - Regular