Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode

Autor(es)

Goncalves, L. F. ^[1] ; Rocha, L. S. R. ^[1] ; Silva, C. C. ^[1] ; Cortes, J. A. ^[1] ; Ramirez, M. A. ^[1] ; Simoes, A. Z. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Estadual Paulista Unesp, Fac Engn Guaratingueta, Av Dr Ariberto Pereira da Cunha 333, BR-12516410 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 27, n. 3, p. 2866-2874, MAR 2016.
• Citações Web of Science: 2

Resumo

Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) and LaNiO3 bottom electrode substrates at room temperature from the polymeric precursor method. X-ray powder diffraction was used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. LaNiO3 (LNO) bottom electrode strongly promotes the formation of high intensity (111) texture of BNO films. The dielectric constants of the films increased from 192 to 357 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10(-7) to 10(-8) A/cm(2) at a voltage of 5 V. The reduction of dc leakage current is explained on the basis of relative phase stability and improved microstructure of the material. The capacitance density of 75 fC/mu m(2), dielectric loss of 0.04 % at 1 MHz, and breakdown strength of about 0.30 MV/cm is compatible with embedded decoupling capacitors applications. (AU)

• Processo FAPESP: 08/57872-1 - Instituto Nacional de Ciências dos Materiais em Nanotecnologia
• Beneficiário: Elson Longo da Silva
• Modalidade de apoio: Auxílio à Pesquisa - Temático
• Processo FAPESP: 13/07296-2 - CDMF - Centro de Desenvolvimento de Materiais Funcionais
• Beneficiário: Elson Longo da Silva
• Modalidade de apoio: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs