Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

Autor(es)

Rodrigues, D. H. ^{[1, 2]} ; Brasil, M. J. S. P. ^[3] ; Orlita, M. ^{[4, 5]} ; Kunc, J. ^[4] ; Galeti, H. V. A. ^[6] ; Henini, M. ^[7] ; Taylor, D. ^[7] ; Galvao Gobato, Y. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[2] Inst Fed Educ Ciencia & Tecnol Sergipe, BR-49400000 Lagarto, SE - Brazil

^[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

^[4] Charles Univ Prague, Inst Phys, Ke Karlovu 5, CR-12116 Prague 2 - Czech Republic

^[5] CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, 25 Ave Martyrs, F-38042 Grenoble - France

^[6] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil

^[7] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 49, n. 16 APR 27 2016.
• Citações Web of Science: 0

Resumo

We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices. (AU)

• Processo FAPESP: 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados
• Beneficiário: Helder Vinícius Avanço Galeti
• Linha de fomento: Auxílio à Pesquisa - Regular
• Processo FAPESP: 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores
• Beneficiário: Yara Galvão Gobato
• Linha de fomento: Auxílio à Pesquisa - Regular