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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

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Author(s):
Rodrigues, D. H. [1, 2] ; Brasil, M. J. S. P. [3] ; Orlita, M. [4, 5] ; Kunc, J. [4] ; Galeti, H. V. A. [6] ; Henini, M. [7] ; Taylor, D. [7] ; Galvao Gobato, Y. [1]
Total Authors: 8
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil
[2] Inst Fed Educ Ciencia & Tecnol Sergipe, BR-49400000 Lagarto, SE - Brazil
[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
[4] Charles Univ Prague, Inst Phys, Ke Karlovu 5, CR-12116 Prague 2 - Czech Republic
[5] CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, 25 Ave Martyrs, F-38042 Grenoble - France
[6] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil
[7] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England
Total Affiliations: 7
Document type: Journal article
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 49, n. 16 APR 27 2016.
Web of Science Citations: 0
Abstract

We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices. (AU)

FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
Grantee:Helder Vinícius Avanço Galeti
Support Opportunities: Regular Research Grants
FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
Grantee:Yara Galvão Gobato
Support Opportunities: Regular Research Grants