Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices

• Grant number: 14/50513-7
• Support Opportunities: Regular Research Grants
• Duration: March 01, 2015 - February 28, 2018
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Convênio/Acordo: AKA
• Principal Investigator: Helder Vinícius Avanço Galeti
• Grantee: Helder Vinícius Avanço Galeti
• Principal researcher abroad: Mircea Guina
• Institution abroad: Tampere University of Technology (TUT), Finland
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil

Abstract

The project aims at breakthrough developments concerning the technology and applications of emerging III-Bi-V semiconductor materiais, nanostructures and nanodevices such as solar cells and lasers. We will combine the state-of-the-art material synthesis and device fabrication facilities available at the Optoelectronics Research Centre (Finnish partners) with the broad expertise of transport and optical properties of semiconductor materiais available at UFSCAR (Brazilian partner). From a generic perspective the project targets to establish a long standing cooperation between leading research actors in Finland and Brazil. (AU)

Scientific publications

(15)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

KOIVUSALO, EERO; HILSKA, JOONAS; GALETI, HELDER V. A.; GALVAO GOBATO, YARA; GUINA, MIRCEA; HAKKARAINEN, TEEMU. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires. Nanotechnology, v. 31, n. 46, NOV 13 2020. (19/07442-5, 14/50513-7)

PITON, MARCELO RIZZO; HAKKARAINEN, TEEMU; HILSKA, JOONAS; KOIVUSALO, EERO; LUPO, DONALD; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; GUINA, MIRCEA. Optimization of Ohmic Contacts to p-GaAs Nanowires. NANOSCALE RESEARCH LETTERS, v. 14, n. 1, DEC 2019. (14/50513-7, 16/10668-7)

SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, MAY 18 2020. (14/50513-7, 16/10668-7)

AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, OCT 25 2018. (14/50513-7, 16/10668-7)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, JAN 25 2020. (14/50513-7, 16/10668-7)

TONG, CAPUCINE; BIDAUD, THOMAS; KOIVUSALO, EERO; PITON, MARCELO RIZZO; GUINA, MIRCEA; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; CATTONI, ANDREA; HAKKARAINEN, TEEMU; COLLIN, STEPHANE. athodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowire. Nanotechnology, v. 33, n. 18, APR 30 2022. (14/50513-7, 19/23488-5, 19/07442-5)

BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, FEB 2017. (12/24055-6, 14/50513-7)

KOIVUSALO, EERO S.; HAKKARAINEN, TEEMU V.; GALETI, HELDER V. A.; GOBATO, YARA G.; DUBROVSKII, VLADIMIR G.; GUINA, MIRCEA D.. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires. Nano Letters, v. 19, n. 1, p. 82-89, JAN 2019. (16/10668-7, 14/50513-7)

BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, SEP 7 2016. (12/24055-6, 16/07239-7, 14/50513-7)

GUNES, M.; UKELGE, M. O.; DONMEZ, O.; EROL, A.; GUMUS, C.; ALGHAMDI, H.; GALETI, H. V. A.; HENINI, M.; SCHMIDBAUER, M.; HILSKA, J.; et al. Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 12, DEC 2018. (14/50513-7, 16/10668-7)

HAKKARAINEN, TEEMU; PITON, MARCELO RIZZO; FIORDALISO, ELISABETTA MARIA; LESHCHENKO, EGOR D.; KOELLING, SEBASTIAN; BETTINI, JEFFERSON; AVANCO GALETI, HELDER VINICIUS; KOIVUSALO, EERO; GOBATO, YARA GALVA; RODRIGUES, ARIANO DE GIOVANNI; et al. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires. PHYSICAL REVIEW MATERIALS, v. 3, n. 8, AUG 5 2019. (18/01808-5, 14/50513-7, 16/10668-7)

ORSI GORDO, V.; BALANTA, M. A. G.; GALVAO GOBATO, Y.; COVRE, F. S.; GALETI, H. V. A.; IIKAWA, F.; COUTO, JR., O. D. D.; QU, F.; HENINI, M.; HEWAK, D. W.; et al. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. NANOSCALE, v. 10, n. 10, p. 4807-4815, MAR 14 2018. (14/50513-7, 16/10668-7, 16/16365-6, 12/11382-9)

PITON, MARCELO RIZZO; KOIVUSALO, EERO; HAKKARAINEN, TEEMU; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; TALMILA, SOILE; SOUTO, SERGIO; LUPO, DONALD; GOBATO, YARA GALVAO; GUINA, MIRCEA. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, AUG 16 2019. (14/50513-7, 16/10668-7, 18/01808-5)

PRANDO, G. A.; ORSI GORDO, V.; PUUSTINEN, J.; HILSKA, J.; ALGHAMDI, H. M.; SOM, G.; GUNES, M.; AKYOL, M.; SOUTO, S.; RODRIGUES, A. D.; et al. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, AUG 2018. (16/10668-7, 14/50513-7, 12/24055-6)

RODRIGUES, D. H.; BRASIL, M. J. S. P.; ORLITA, M.; KUNC, J.; GALETI, H. V. A.; HENINI, M.; TAYLOR, D.; GALVAO GOBATO, Y.. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 16, APR 27 2016. (14/50513-7, 12/24055-6)