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BISMIDES semiconductor nanostructures and novel materials for mid infrared applications

Grant number: 19/07442-5
Support Opportunities:Regular Research Grants
Duration: November 01, 2019 - April 30, 2022
Field of knowledge:Engineering - Electrical Engineering - Electrical Materials
Convênio/Acordo: University of Nottingham
Principal Investigator:Helder Vinícius Avanço Galeti
Grantee:Helder Vinícius Avanço Galeti
Principal researcher abroad: Mohamed Henini
Institution abroad: University of Nottingham, University Park, England
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
Associated researchers:Sergio Paulo Amaral Souto ; Yara Galvão Gobato


Dilute-bismide compounds of the form III-Bi-V are a prospective class of 'highly mismatched' alloys (HMAs) in which a small fraction of the host atoms is replaced by a very different element, i.e. another group III or V atom. Bismides have been predicted to provide new fundamental material physics that could lead to significant enhancement in the perfor-mance of optoelectronic and photonic devices and in general to new applications, particularly for near and mid infrared wavelengths. The overall understanding of the interplay between the fundamental properties of semiconductor nanostructures relevant for devices and material fab-rication aspects has to be significantly advanced. Amongst these properties the structural and optical properties are seen as essential for a large class of emerging devices where bismides can provide new solutions in the infrared energy range, such as solar cells, sensors and lasers. Bi-MIR project aims at breakthrough developments concerning the technology and applications of emerging III-Bi-V materials and nanostructures. We do this by combining the state-of-the-art material synthesis and device fabrication facilities available at Nottingham University - UoN (British partner) with the broad expertise concerning the characterization of structural and optical properties of semiconductor materials available at UFSCar (Brazilian partner). This research project will benefit the ongoing researches on synthesis as well as optical and struc-tural characterization of nanostructures, opening new opportunities to strengthen the collabo-ration between a young Brazilian researcher, Prof. Helder Galeti, and a senior research from UK, Prof M. Henini, that have collaborated for many years without a formal support. During this time, very interesting data related to spin effects, transport an optical properties in semi-conductor nanostructures were obtained and published in high impact international journals. The establishment of a formal partnership between the researchers will deepen and open new research fronts in the field of nanostructured semiconductor materials. (AU)

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Scientific publications (6)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
ALGHAMDI, HAIFA; GORDO, VANESSA ORSI; SCHMIDBAUER, MARTIN; FELIX, JORLANDIO F.; ALHASSAN, SULTAN; ALHASSNI, AMRA; PRANDO, GABRIELA AUGUSTA; COELHO-JUNIOR, HORACIO; GUNES, MUSTAFA; AVANCO GALETI, HELDER VINICIUS; et al. Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE. Journal of Applied Physics, v. 127, n. 12, . (19/07442-5, 18/01808-5, 16/10668-7)
ALGHAMDI, HAIFA; ALHASSNI, AMRA; ALHASSAN, SULTAN; ALMUNYIF, AMJAD; KLEKOVKIN, ALEXEY, V; TRUNKIN, IGOR N.; VASILIEV, ALEXANDER L.; GALETI, HELDER V. A.; GOBATO, YARA GALVAO; KAZAKOV, IGOR P.; et al. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates. Journal of Alloys and Compounds, v. 905, p. 14-pg., . (19/23488-5, 19/07442-5)
ALHASSAN, SULTAN; DE SOUZA, DANIELE; ALHASSNI, AMRA; ALMUNYIF, AMJAD; ALOTAIBI, SAUD; ALMALKI, ABDULAZIZ; ALHUWAYZ, MARYAM; KAZAKOV, IGOR P.; KLEKOVKIN, V, ALEXEY; TSEKHOSH, I, VLADIMIR; et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1-xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, . (19/07442-5, 19/23488-5)
DE SOUZA, DANIELE; ALHASSAN, SULTAN; ALOTAIBI, SAUD; ALHASSNI, AMRA; ALMUNYIF, AMJAD; ALBALAWI, HIND; KAZAKOV, IGOR P.; KLEKOVKIN, V, ALEXEY; ZINOVEV, SERGEY A.; LIKHACHEV, IGOR A.; et al. Structural and optical properties of n-type and p-type GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, . (19/07442-5, 18/01808-5)
TONG, CAPUCINE; BIDAUD, THOMAS; KOIVUSALO, EERO; PITON, MARCELO RIZZO; GUINA, MIRCEA; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; CATTONI, ANDREA; HAKKARAINEN, TEEMU; COLLIN, STEPHANE. athodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowire. Nanotechnology, v. 33, n. 18, . (14/50513-7, 19/23488-5, 19/07442-5)
KOIVUSALO, EERO; HILSKA, JOONAS; GALETI, HELDER V. A.; GALVAO GOBATO, YARA; GUINA, MIRCEA; HAKKARAINEN, TEEMU. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires. Nanotechnology, v. 31, n. 46, . (19/07442-5, 14/50513-7)

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