Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films

Author(s):Show less -

Al Mashary, Faisal S. ^{[1, 2]} ; de Castro, Suelen ^[3] ; da Silva, Arlon Fernando ^[4] ; Felix, Jorlandio Francisco ^[4] ; Piton, Marcelo Rizzo ^[3] ; Avanco Galeti, Helder Vinicius ^[3] ; Rodrigues, Ariano De Giovanni ^[3] ; Gobato, Yara Galvao ^[3] ; Al Saqri, Noor ^[1] ; Henini, Mohamed ^{[1, 5]} ; Al Huwayz, Maryam M. ^[1] ; Albadri, Abdulrahman M. ^[6] ; Alyamani, Ahmed Y. ^[6] ; Albrithen, Hamad A. ^{[6, 7]} ; Alhusaini, Sami A. ^[6] ; Aljaber, Khalid M. ^[6] ; Alanazi, Ali Z. ^[6] ; Alghamdi, Fahad S. ^[6]

Affiliation

^[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England

^[2] Qassim Univ, Coll Sci, Dept Phys, Buraydah 14452 - Saudi Arabia

^[3] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[4] Univ Brasilia, Inst Phys, BR-70910900 Brasilia, DF - Brazil

^[5] Univ South Africa UNISA, Coll Grad Studies, UNESCO UNISA Africa Chair Nanosci & Nanotechnol L, POB 392, Pretoria - South Africa

^[6] King Abdulaziz City Sci & Technol, Natl Ctr Nanotechnol & Adv Mat, Riyadh 11442 - Saudi Arabia

^[7] King Saud Univ, Phys & Astron Dept, ALASeR KAIN, Riyadh 11451 - Saudi Arabia

• Document type: Journal article
• Source: Journal of Alloys and Compounds; v. 766, p. 194-203, OCT 25 2018.
• Web of Science Citations: 6

Abstract

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at -4 V reverse bias, the PLD samples have lower leakage currents (-1.4 x 10(-7) A) as compared to the sputtering samples (-5.9 x 10(-7) A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films. (C) 2018 Elsevier B.V. All rights reserved. (AU)

• FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
• Grantee: Yara Galvão Gobato
• Support type: Regular Research Grants
• FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
• Grantee: Helder Vinícius Avanço Galeti
• Support type: Regular Research Grants