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Investigation of the semiconductor oxide SnO2, in the form of thin films, and combination with Cu2-xS forming multilayered heterostructures

Grant number: 18/26039-4
Support type:Scholarships in Brazil - Master
Effective date (Start): December 01, 2019
Effective date (End): April 30, 2021
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal Investigator:Luis Vicente de Andrade Scalvi
Grantee:João Victor Morais Lima
Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

The project proposed here comprises the study of the semiconductor tin dioxide (SnO2) and involves the combination of this material with layers of copper sulfide (Cu2-xS), aiming, in addition to the academic study regarding the semiconductor oxide, and the nanostructures of these materials, the possibility of several applications, in electronics or optoelectronics or even as gas sensors, due to the combination of the high optical transparency of the matrices and the improvement in the electric transport by the addition of Cu2-xS. SnO2 will be doped with the rare earth Eu3+, due to the luminescent properties of this earth-rare ion. It is important to mention that there is a great innovation in this project in relation to the work developed during my scientific initiation, where we investigated properties of heterostructures in SnO2/Cu1.8S/SnO2 form. In the present case, in addition to using the multilayer structure, the heterostructures will be made using different stoichiometries of copper sulfide, ie CuS, Cu.75S, Cu1,8S, Cu1.95S and Cu2S. In addition to the comparison between these different stoichiometries, results obtained can be compared with the previous work, already published. For this, the study of the heterostructure will be accomplished combining these two materials in the multilayer form of these thin films. Tin dioxide when doped with CuO in the presence of pollutant gases, such as hydrogen sulfide (H2S), bring an improvement to the electrical transport of SnO2, related to CuO transformation in CuS, justifying the choice of these materials for this work. In addition, recent studies have shown that the heterostructure in the SnO2/Cu1.8S/SnO2 form showed a predominantly capacitive behavior and a high current density, with a potential application in supercapacitive devices. The SnO2 thin films will be obtained by the sol-gel dip-coating technique, while the Cu2-xS film will be deposited by resistive evaporation. Measurements will be made for electrical, optical and structural characterization of each of the proposed structures. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
BORATTO, MIGUEL H.; LIMA, JOAO V. M.; SCALVI, LUIS V. A.; GRAEFF, CARLOS F. O. Low-temperature ZrO(2)thin films obtained by polymeric route for electronic applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 31, n. 18 AUG 2020. Web of Science Citations: 0.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.