Scholarship 22/13479-1 - Dióxido de estanho, Filmes finos - BV FAPESP
Advanced search
Start date
Betweenand

Deposition and doping of single and polycrystalline SnO2 and Ga2O3 thin films and formation of multilayered structures

Grant number: 22/13479-1
Support Opportunities:Scholarships in Brazil - Doctorate
Start date until: May 01, 2024
End date until: March 31, 2026
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal Investigator:Luis Vicente de Andrade Scalvi
Grantee:Luiz Felipe Kaezmarek Pedrini
Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

The present proposal involves the preparation of a type-I heterojunction between SnO2 and Ga2O3, as well as how to combine the energy band diagrams at the interface between these oxide semiconductors for the development of electronic devices such as field-effect transistors (FETs) and heterojunction bipolar transistors (HBTs).With samples prepared in the polycrystalline form by chemical route in the laboratories of the Faculty of Sciences of UNESP, campus Bauru, and in monocrystalline form, in collaboration with prof. Roger Reeves ofSchool of Physical and Chemical Sciences, University of Canterbury, New Zealand, the investigation of the mechanisms of electrical transport, resulting from the interfacial interaction between these semiconductors is a way to improve Ga2O3 electronic devices for more sensitive applications, creating conduction channels that require less energy, due to the increase in electronic mobility and the concentration of charge carriers in the channels formed at the interface or by the bulk of the material.In the latter case, doping with antimony in SnO2 conferred a higher concentration of carriers in the bulk of the material, similar to preparation of Ga2O3 crystals by the OFZ (Optical Floating Zone) method made by a Chinese optics research group, published in 2023, that used the same type of doping and showed an increase in the concentration of carriers when replacing Ga3+ ions with Sb5+.In spite of decreasing the mobility of the carriers, the net effect was still to increase the conductivity. The creation of conduction channels for the high concentration of charge carriers through the heterojunctions and structuring of layers is one of the goals of this project. The preparation of field-effect transistors from prepared material both in monocrystalline form as polycrystalline is an opportunity to look for ways toreduce production costs by comparing the processes and products of each deposition method, as well as to investigate different topologies for the applications of theheterostructures of the proposed materials. This proposal aims to improve electronic devices, such as FETs and HBTs, through the SnO2/Ga2O3 heterojunction, optimizing the conduction by interfacial interaction and doping, and control through perpendicular bias to the conduction channel. The comparison of different deposition methods, aims at efficiency and economic feasibility for other sophisticated applications such as cells sensors, and photocatalysis.

News published in Agência FAPESP Newsletter about the scholarship:
More itemsLess items
Articles published in other media outlets ( ):
More itemsLess items
VEICULO: TITULO (DATA)
VEICULO: TITULO (DATA)

Please report errors in scientific publications list using this form.