|Support type:||Scholarships in Brazil - Master|
|Effective date (Start):||September 01, 2007|
|Effective date (End):||July 31, 2009|
|Field of knowledge:||Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials|
|Principal Investigator:||Luis Vicente de Andrade Scalvi|
|Grantee:||Tatiane de Fátima Pineiz|
|Home Institution:||Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil|
This project includes, in a first step, the production and electrical characterization of Eu doped SnO2 thin films as well as Ce-doped films, deposited by sol-gel dip-coating. In a second step, deposition of GaAs thins films, by resistive evaporation technique will be carried out, on SnO2 thin film surface. This simple device is proposed to combine rare-earth incorporation in an oxide semiconductor matrix and another layer with a high mobility semiconductor. Deposition conditions of films will be analyzed, and their electrical characteristics along with deposited electrodes will be evaluated, taking into account different rare-earth doping concentration. Measurements to be done include: resistivity as function of temperature, optical absorption, X-ray diffraction, current-voltage as function of temperature, capacitance and photoluminescence. Our laboratories present all the necessary facilities to the complete developing of such measurements. Scanning electron microscopy will also be done, in order to evaluate the interface substrate/SnO2 and SnO2/GaAs, and estimate the film thickness, because the conduction channel is a fundamental parameter in the understanding of transport properties. The main goal is to acquire scientific and technological knowledge, in order to build electroluminescent devices.