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Heterojunctions of SnO2 for applications in optoelectronic devices:1) GaAs/SnO2, 2) grafeno/SnO2

Grant number: 16/12216-6
Support type:Scholarships in Brazil - Doctorate
Effective date (Start): October 01, 2016
Effective date (End): February 29, 2020
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Principal Investigator:Luis Vicente de Andrade Scalvi
Grantee:Diego Henrique de Oliveira Machado
Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil
Associated scholarship(s):17/24311-6 - Piezoelectric excitation of GHz vibrations in GaAs-based structures, BE.EP.DR

Abstract

In recent years we have dedicated to the investigation of transport properties of the heterojunction SnO2 / GaAs, which has opened possibilities to several specific projects. In this context this PhD project can be suited, being divided into two lines of research: 1) Deposition of heterojunction of SnO2 with GaAs, where the SnO2 can be pure or doped with rare-earth ions, such as Er3 + or Eu3 +, because they present high efficiency of optical emission in this matrix. 2) synthesis of hybrid structure composed of SnO2 / graphene. In these lines, the investigation of thermally and photo-excited electrical transport as well as optical properties of these structures will be critical. The main objective is the development of scientific and technological knowledge, and contribution to the making of electroluminescent devices, transparent high mobility transistors and / or gas sensors combining transport both GaAs layer or graphene with the efficiency of emission of rare-earth in the SnO2 matrix. The electrical and optical characteristics of the films, when coupled in the form of heterojunction, can show improvement related to electric transport. Measurements to be taken include: resistivity and current-voltage depending on the temperature, optical absorption from UV to infrared, X-ray diffraction, photoluminescence, atomic force microscopy and scanning electron microscopy, to evaluate the interfaces substrate/SnO2 and SnO2/GaAs, since the interfacial conducting channel is an essential parameter for transport properties. Aiming to further explore the properties of these heterojunction interfaces, will be held optical excitation experiments of films, obtaining electrical signal and also optical emission. Production, characterization and application of the hybrid graphene and semiconductor oxide SnO2 will also be performed, where the properties of the hybrid structure will be investigated. The technique for the deposition of graphene is the mechanical exfoliation. The combination of metal oxides with graphene in a hybrid structure may be listed as an alternative to combine the properties of both materials.

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
MACHADO, DIEGO H. O.; DA SILVA, JOSE H. D.; TABATA, AMERICO; SCALVI, LUIS V. A. Influence of thermal annealing on the properties of evaporated Er-doped SnO2. Materials Research Bulletin, v. 120, DEC 2019. Web of Science Citations: 0.
MACHADO, DIEGO H. O.; SCALVI, LUIS V. A.; BUENO, CRISTINA F. Photoluminescence of Rare-Earth Ions in the Nanocrystalline GaAs/SnO2 Heterostructure and the Photoinduced Electrical Properties Related to the Interface. CONDENSED MATTER, v. 2, n. 1 MAR 2017. Web of Science Citations: 1.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.