Deposition and characterization of SnO2 and GaAs thin films, and investigation of SnO2/GaAs heterojunction. Rare-earth ion doping.

• Grant number: 10/20460-8
• Support type: Scholarships in Brazil - Scientific Initiation
• Effective date (Start): March 01, 2011
• Effective date (End): December 31, 2012
• Field of knowledge: Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
• Principal researcher: Luis Vicente de Andrade Scalvi
• Grantee: Cristina de Freitas Bueno
• Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

Production, along with electrical and optical characterization of two types of thin films: a) rare-earth doped SnO2, deposited via sol-gel-dip-coating, b) GaAs, deposited by evaporation resistive technique. In a second step, GaAs films will be deposited on the films of tin dioxide to combine three fundamental aspects: 1) incorporation of rare-earth in the semiconductor oxide matrix, which presents high efficient emission 2) combination of a semiconductor oxide with a high-mobility electronics semiconductor, to separate electron scattering centers (ionized rare-earth ions) from the electric transport region, 3) investigation of interface between the semiconductors. The deposition conditions as well as the electrical characteristics of the films will be analyzed, mainly regarding the electric transport in the heterojunction, whereas this type of interface can increase the electrical conductivity. To explore further the heterojunction interface properties, experiments of optical excitation of films obtaining electrical signal shall be carried out. The main objective is the development of scientific and technological knowledge, in order to contribute to future confection of electroluminescent devices.