Investigation of sensing properties of sol-gel processed 4 at%Sb:SnO2/TiO2 thin films

Autor(es)

Boratto, Miguel H. ^{[1, 2]} ; Ramos, Jr., Roberto A. ^[1] ; Scalvi, Luis V. A. ^{[1, 2]}

Afiliação do(s) autor(es)

^[1] Sao Paulo State Univ UNESP, Sch Sci, POSMAT Postgrad Program Mat Sci & Technol, BR-17033360 Sao Paulo - Brazil

^[2] Sao Paulo State Univ UNESP, Sch Sci, Dept Phys, BR-17033360 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 29, n. 1, p. 467-473, JAN 2018.
• Citações Web of Science: 2

Resumo

In this work we investigate the gas and photo sensing properties of the antimony doped tin oxide and titanium oxide (4 at%Sb:SnO2/TiO2) nanocrystalline thin films deposited by sol-gel dip-coating. Photoconductivity measurements are carried out under solar light spectra irradiation at different powers. These results show a photo sensitivity of the films in a lateral junction due to interfacial defects. Gas sensitivity was studied at different pressures, and higher conductivity is presented at lower pressure compared to oxygen-rich atmosphere. It occurs due to absence of oxygen adsorption on the semiconductors surface. TiO2 films are also investigated concerning its properties to gas sensing under photo-excitation with InGaN LED light source with wavelength centered in 450 nm. The decay of photo-induced current evaluated under O-2 and vacuum atmospheres shows that the sample illumination may contribute to higher gas-sensitivity. This measurement allows determining the charge carrier capture energy, that is related to trapping dominated by distinct defects in each atmosphere. (AU)

• Processo FAPESP: 17/10766-1 - 19th Internacional Sol-Gel Conference - (Sol-Gel Liege 2017)
• Beneficiário: Luis Vicente de Andrade Scalvi
• Modalidade de apoio: Auxílio à Pesquisa - Reunião - Exterior