Advanced search
Start date
Betweenand
Related content
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Investigation of sensing properties of sol-gel processed 4 at%Sb:SnO2/TiO2 thin films

Full text
Author(s):
Boratto, Miguel H. [1, 2] ; Ramos, Jr., Roberto A. [1] ; Scalvi, Luis V. A. [1, 2]
Total Authors: 3
Affiliation:
[1] Sao Paulo State Univ UNESP, Sch Sci, POSMAT Postgrad Program Mat Sci & Technol, BR-17033360 Sao Paulo - Brazil
[2] Sao Paulo State Univ UNESP, Sch Sci, Dept Phys, BR-17033360 Sao Paulo - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 29, n. 1, p. 467-473, JAN 2018.
Web of Science Citations: 2
Abstract

In this work we investigate the gas and photo sensing properties of the antimony doped tin oxide and titanium oxide (4 at%Sb:SnO2/TiO2) nanocrystalline thin films deposited by sol-gel dip-coating. Photoconductivity measurements are carried out under solar light spectra irradiation at different powers. These results show a photo sensitivity of the films in a lateral junction due to interfacial defects. Gas sensitivity was studied at different pressures, and higher conductivity is presented at lower pressure compared to oxygen-rich atmosphere. It occurs due to absence of oxygen adsorption on the semiconductors surface. TiO2 films are also investigated concerning its properties to gas sensing under photo-excitation with InGaN LED light source with wavelength centered in 450 nm. The decay of photo-induced current evaluated under O-2 and vacuum atmospheres shows that the sample illumination may contribute to higher gas-sensitivity. This measurement allows determining the charge carrier capture energy, that is related to trapping dominated by distinct defects in each atmosphere. (AU)