Tailoring multilayer quantum wells for spin devices

Autor(es)

Ullah, S. ^{[1, 2]} ; Gusev, G. M. ^[1] ; Bakarov, A. K. ^{[3, 4]} ; Hernandez, F. G. G. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo, Inst Fis, Caixa Postal 66318, BR-05315970 Sao Paulo, SP - Brazil

^[2] Gomal Univ, Dept Phys, Dera Ismail Khan 29220, KP - Pakistan

^[3] Novosibirsk State Univ, Novosibirsk 630090 - Russia

^[4] Inst Semicond Phys, Novosibirsk 630090 - Russia

• Tipo de documento: Artigo Científico
• Fonte: PRAMANA-JOURNAL OF PHYSICS; v. 91, n. 3 SEP 2018.
• Citações Web of Science: 0

Resumo

Time-resolved Kerr rotation and resonant spin amplification techniques were used to study the spin dynamics in multilayer GaAs / AlGaAs quantum wells. The spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with remarkably long dephasing time T-2{*}>13 ns for the structure doped beyond metal-insulator transition. Dyakonov-Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factor for the spin coherence time. In the metallic regime, we found that the electron-electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov-Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, the Dyakonov-Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T-2{*}. Our findings, namely, long-lived spin coherence persisting up to high temperature, spin polarisation decay time with and without magnetic field, the spin-orbit field, single electron relaxation time, transport scattering time and the electron-electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices. (AU)

• Processo FAPESP: 14/25981-7 - Geração e mapeamento espacial e temporal de correntes de spin
• Beneficiário: Felix Guillermo Gonzalez Hernandez
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 15/16191-5 - Pesquisas em novos materiais envolvendo campos magnéticos intensos e baixas temperaturas
• Beneficiário: Gennady Gusev
• Modalidade de apoio: Auxílio à Pesquisa - Temático
• Processo FAPESP: 09/15007-5 - Dinâmica do magnetismo em nanocristais semicondutores
• Beneficiário: Felix Guillermo Gonzalez Hernandez
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 13/03450-7 - O efeito Hall de spin em semicondutores
• Beneficiário: Felix Guillermo Gonzalez Hernandez
• Modalidade de apoio: Auxílio à Pesquisa - Regular