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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Tailoring multilayer quantum wells for spin devices

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Ullah, S. [1, 2] ; Gusev, G. M. [1] ; Bakarov, A. K. [3, 4] ; Hernandez, F. G. G. [1]
Total Authors: 4
[1] Univ Sao Paulo, Inst Fis, Caixa Postal 66318, BR-05315970 Sao Paulo, SP - Brazil
[2] Gomal Univ, Dept Phys, Dera Ismail Khan 29220, KP - Pakistan
[3] Novosibirsk State Univ, Novosibirsk 630090 - Russia
[4] Inst Semicond Phys, Novosibirsk 630090 - Russia
Total Affiliations: 4
Document type: Journal article
Source: PRAMANA-JOURNAL OF PHYSICS; v. 91, n. 3 SEP 2018.
Web of Science Citations: 0

Time-resolved Kerr rotation and resonant spin amplification techniques were used to study the spin dynamics in multilayer GaAs / AlGaAs quantum wells. The spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with remarkably long dephasing time T-2{*}>13 ns for the structure doped beyond metal-insulator transition. Dyakonov-Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factor for the spin coherence time. In the metallic regime, we found that the electron-electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov-Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, the Dyakonov-Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T-2{*}. Our findings, namely, long-lived spin coherence persisting up to high temperature, spin polarisation decay time with and without magnetic field, the spin-orbit field, single electron relaxation time, transport scattering time and the electron-electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices. (AU)

FAPESP's process: 14/25981-7 - Generating and mapping spin currents with space and time resolution
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support type: Research Projects - Thematic Grants
FAPESP's process: 09/15007-5 - Magnetic dynamics in semiconductor nanocrystals
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 13/03450-7 - The spin Hall effect in semiconductors
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants