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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Study of intense photoluminescence from monodispersed beta-Ga2O3 ellipsoidal structures

Texto completo
Autor(es):
Rodrigues, Aline V. [1] ; Orlandi, Marcelo O. [1]
Número total de Autores: 2
Afiliação do(s) autor(es):
[1] UNESP Sao Paulo State Univ, Dept Phys Chem, BR-14800060 Araraquara, SP - Brazil
Número total de Afiliações: 1
Tipo de documento: Artigo Científico
Fonte: CERAMICS INTERNATIONAL; v. 45, n. 4, p. 5023-5029, MAR 2019.
Citações Web of Science: 0
Resumo

Monoclinic beta-Ga2O3 particles were obtained through the self-assembly mechanism of nanosheets at different temperatures. An ellipsoidal morphology was obtained through precipitation and calcination processes. The influence of synthesis on the structure and morphology of materials was investigated using X-ray diffraction, scanning and transmission electron microscopy, dynamic light scattering, Raman and Fourier-transform infrared (FTIR) spectroscopies. The ellipsoidal morphologies with mesoporous were led by the Ostwald ripening and self-assembly mechanisms. An investigation into their optical properties revealed very broad and intense photoluminescence emission spectra, which were explained by the presence of oxygen vacancies in the structures. The specific surface areas were found to influence emission intensities. Different vibrations of Ga-O bonds in the Raman and FTIR spectra demonstrated two types of Ga3+ ions (GaO6 octahedral and GaO4 tetrahedral chains). The successful synthesis and the high emission intensities in the blue spectral range are representative of the strong potential of beta-Ga2O3 particles in the use of optoelectronic devices as light-emitting materials. (AU)

Processo FAPESP: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
Beneficiário:Marcelo Ornaghi Orlandi
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 17/26219-0 - Estudo de sensores químicos de elemento único a base de semicondutores de óxidos metálicos
Beneficiário:Marcelo Ornaghi Orlandi
Linha de fomento: Auxílio à Pesquisa - Regular