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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Study of intense photoluminescence from monodispersed beta-Ga2O3 ellipsoidal structures

Full text
Author(s):
Rodrigues, Aline V. [1] ; Orlandi, Marcelo O. [1]
Total Authors: 2
Affiliation:
[1] UNESP Sao Paulo State Univ, Dept Phys Chem, BR-14800060 Araraquara, SP - Brazil
Total Affiliations: 1
Document type: Journal article
Source: CERAMICS INTERNATIONAL; v. 45, n. 4, p. 5023-5029, MAR 2019.
Web of Science Citations: 1
Abstract

Monoclinic beta-Ga2O3 particles were obtained through the self-assembly mechanism of nanosheets at different temperatures. An ellipsoidal morphology was obtained through precipitation and calcination processes. The influence of synthesis on the structure and morphology of materials was investigated using X-ray diffraction, scanning and transmission electron microscopy, dynamic light scattering, Raman and Fourier-transform infrared (FTIR) spectroscopies. The ellipsoidal morphologies with mesoporous were led by the Ostwald ripening and self-assembly mechanisms. An investigation into their optical properties revealed very broad and intense photoluminescence emission spectra, which were explained by the presence of oxygen vacancies in the structures. The specific surface areas were found to influence emission intensities. Different vibrations of Ga-O bonds in the Raman and FTIR spectra demonstrated two types of Ga3+ ions (GaO6 octahedral and GaO4 tetrahedral chains). The successful synthesis and the high emission intensities in the blue spectral range are representative of the strong potential of beta-Ga2O3 particles in the use of optoelectronic devices as light-emitting materials. (AU)

FAPESP's process: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
Grantee:Marcelo Ornaghi Orlandi
Support type: Regular Research Grants
FAPESP's process: 17/26219-0 - Study of single element chemical sensor devices based on semiconducting metal oxide materials
Grantee:Marcelo Ornaghi Orlandi
Support type: Regular Research Grants