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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys

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Autor(es):
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Balanta, M. A. G. [1, 2] ; de Oliveira, P. B. A. [1] ; Albalawi, H. [3, 4] ; Galvao Gobato, Y. [1, 5] ; Galeti, H. V. A. [6] ; Rodrigues, A. D. [1] ; Henini, M. [3] ; Almosni, S. [7] ; Robert, C. [8] ; Balocchi, A. [8] ; Leger, Y. [7] ; Carrere, H. [8] ; Bahri, M. [9] ; Patriarche, G. [9] ; Marie, X. [8] ; Cornet, C. [7]
Número total de Autores: 16
Afiliação do(s) autor(es):
[1] Univ Fed Sao Carlos, Phys Dept, BR-13560905 Sao Carlos, SP - Brazil
[2] Univ Fed Uberlandia, ICENP, BR-38304402 Ituiutaba, MG - Brazil
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[4] Princess Nourah Bint Abdulrahman Univ, Fac Sci, Phys Dept, Riyadh - Saudi Arabia
[5] Radboud Univ Nijmegen, EMFL, HFML, Toernooiveld 7, NL-6525 ED Nijmegen - Netherlands
[6] Univ Fed Sao Carlos, Elect Engn Dept, BR-13560905 Sao Carlos, SP - Brazil
[7] Univ Rennes, INSA Rennes, CNRS, UMR 6082, Inst FOTON, F-35000 Rennes - France
[8] Univ Toulouse, INSA, CNRS, UPS, LPCNO, 135 Ave Rangueil, F-31077 Toulouse - France
[9] Univ Paris Saclay, Univ Paris Sud, CNRS, C2N, 10 Blvd Thomas Gobert, F-91120 Palaiseau - France
Número total de Afiliações: 9
Tipo de documento: Artigo Científico
Fonte: Journal of Alloys and Compounds; v. 814, JAN 25 2020.
Citações Web of Science: 1
Resumo

Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of characterization techniques were used to investigate the effect of N incorporation and thermal annealing effect of GaPN/GaP epilayers for a N content between 0.5% and 3%. Our results have shown that as we increase the N content the PL peak energy presents a red shift which is explained by a band gap reduction. However, important effects of exciton localization on optical properties were also evidenced from cw and time resolved PL (PLRT) and magneto-PL. Our results have demonstrated that as the concentration of N is increased, exciton localization effect is enhanced. A substantial improvement of the optical quality and spin properties of the epilayers has been observed after thermal annealing which are significantly more important for samples with higher nitrogen contents. (C) 2019 Elsevier B.V. All rights reserved. (AU)

Processo FAPESP: 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados
Beneficiário:Helder Vinícius Avanço Galeti
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados
Beneficiário:Yara Galvão Gobato
Linha de fomento: Auxílio à Pesquisa - Regular