Structural and optical properties of n-type and p-type GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Autor(es):Mostrar menos -

De Souza, Daniele ^[1] ; Alhassan, Sultan ^{[2, 3]} ; Alotaibi, Saud ^[2] ; Alhassni, Amra ^[2] ; Almunyif, Amjad ^{[2, 4]} ; Albalawi, Hind ^[4] ; Kazakov, Igor P. ^[5] ; Klekovkin, V, Alexey ; ZinovEv, Sergey A. ^[6] ; Likhachev, Igor A. ^[7] ; Pashaev, Elkhan M. ^[7] ; Souto, Sergio ^[8] ; Galvao Gobato, Yara ^[1] ; Avanco Galeti, Helder Vinicius ^[9] ; Henini, Mohamed ^[2]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Phys Dept, Sao Carlos, SP - Brazil

^[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England

^[3] Jouf Univ, Sch Phys, Coll Sci, Skaka 746317365 - Saudi Arabia

^[4] Princess Nourah bint Abdulrahman Univ, Dept Phys, Coll Sci, Riyadh 11671 - Saudi Arabia

^[5] Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia

^[6] Klekovkin, Alexey, V, Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia

^[7] Kurchatov Inst, Natl Res Ctr, Moscow 123182 - Russia

^[8] Univ Sao Paulo, FZEA ZAB, Pirassununga, SP - Brazil

^[9] Univ Fed Sao Carlos, Elect Engn Dept, Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Semiconductor Science and Technology; v. 36, n. 7 JUL 2021.
• Citações Web of Science: 0

Resumo

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x = 5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction (XRD), micro-Raman at room temperature, and photoluminescence measurements as a function of temperature and laser excitation power (P (EXC)) were performed to investigate their structural and optical properties. XRD results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties. (AU)

• Processo FAPESP: 19/07442-5 - Nanostruturas semicondutoras bismuto diluídas e novos materiais para aplicações no infravermelho médio
• Beneficiário: Helder Vinícius Avanço Galeti
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 18/01808-5 - Propriedades ópticas e de transporte em altos campos magnéticos de heteroestruturas e dispositivos semicondutores baseados em materiais bidimensionais (2d)
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Bolsas no Exterior - Pesquisa