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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Structural and optical properties of n-type and p-type GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates

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Author(s):
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De Souza, Daniele [1] ; Alhassan, Sultan [2, 3] ; Alotaibi, Saud [2] ; Alhassni, Amra [2] ; Almunyif, Amjad [2, 4] ; Albalawi, Hind [4] ; Kazakov, Igor P. [5] ; Klekovkin, V, Alexey ; ZinovEv, Sergey A. [6] ; Likhachev, Igor A. [7] ; Pashaev, Elkhan M. [7] ; Souto, Sergio [8] ; Galvao Gobato, Yara [1] ; Avanco Galeti, Helder Vinicius [9] ; Henini, Mohamed [2]
Total Authors: 15
Affiliation:
[1] Univ Fed Sao Carlos, Phys Dept, Sao Carlos, SP - Brazil
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[3] Jouf Univ, Sch Phys, Coll Sci, Skaka 746317365 - Saudi Arabia
[4] Princess Nourah bint Abdulrahman Univ, Dept Phys, Coll Sci, Riyadh 11671 - Saudi Arabia
[5] Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia
[6] Klekovkin, Alexey, V, Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia
[7] Kurchatov Inst, Natl Res Ctr, Moscow 123182 - Russia
[8] Univ Sao Paulo, FZEA ZAB, Pirassununga, SP - Brazil
[9] Univ Fed Sao Carlos, Elect Engn Dept, Sao Carlos, SP - Brazil
Total Affiliations: 9
Document type: Journal article
Source: Semiconductor Science and Technology; v. 36, n. 7 JUL 2021.
Web of Science Citations: 0
Abstract

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x = 5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction (XRD), micro-Raman at room temperature, and photoluminescence measurements as a function of temperature and laser excitation power (P (EXC)) were performed to investigate their structural and optical properties. XRD results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties. (AU)

FAPESP's process: 19/07442-5 - BISMIDES semiconductor nanostructures and novel materials for mid infrared applications
Grantee:Helder Vinícius Avanço Galeti
Support Opportunities: Regular Research Grants
FAPESP's process: 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials
Grantee:Yara Galvão Gobato
Support Opportunities: Scholarships abroad - Research