Advanced search
Start date
Betweenand
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Structural and optical properties of n-type and p-type GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Full text
Author(s):
Show less -
De Souza, Daniele [1] ; Alhassan, Sultan [2, 3] ; Alotaibi, Saud [2] ; Alhassni, Amra [2] ; Almunyif, Amjad [2, 4] ; Albalawi, Hind [4] ; Kazakov, Igor P. [5] ; Klekovkin, V, Alexey ; ZinovEv, Sergey A. [6] ; Likhachev, Igor A. [7] ; Pashaev, Elkhan M. [7] ; Souto, Sergio [8] ; Galvao Gobato, Yara [1] ; Avanco Galeti, Helder Vinicius [9] ; Henini, Mohamed [2]
Total Authors: 15
Affiliation:
[1] Univ Fed Sao Carlos, Phys Dept, Sao Carlos, SP - Brazil
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[3] Jouf Univ, Sch Phys, Coll Sci, Skaka 746317365 - Saudi Arabia
[4] Princess Nourah bint Abdulrahman Univ, Dept Phys, Coll Sci, Riyadh 11671 - Saudi Arabia
[5] Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia
[6] Klekovkin, Alexey, V, Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia
[7] Kurchatov Inst, Natl Res Ctr, Moscow 123182 - Russia
[8] Univ Sao Paulo, FZEA ZAB, Pirassununga, SP - Brazil
[9] Univ Fed Sao Carlos, Elect Engn Dept, Sao Carlos, SP - Brazil
Total Affiliations: 9
Document type: Journal article
Source: Semiconductor Science and Technology; v. 36, n. 7 JUL 2021.
Web of Science Citations: 0
Abstract

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x = 5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction (XRD), micro-Raman at room temperature, and photoluminescence measurements as a function of temperature and laser excitation power (P (EXC)) were performed to investigate their structural and optical properties. XRD results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties. (AU)

FAPESP's process: 19/07442-5 - BISMIDES semiconductor nanostructures and novel materials for mid infrared applications
Grantee:Helder Vinícius Avanço Galeti
Support type: Regular Research Grants
FAPESP's process: 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials
Grantee:Yara Galvão Gobato
Support type: Scholarships abroad - Research