| Full text | |
| Author(s): Show less - |
De Souza, Daniele
[1]
;
Alhassan, Sultan
[2, 3]
;
Alotaibi, Saud
[2]
;
Alhassni, Amra
[2]
;
Almunyif, Amjad
[2, 4]
;
Albalawi, Hind
[4]
;
Kazakov, Igor P.
[5]
;
Klekovkin, V, Alexey
;
ZinovEv, Sergey A.
[6]
;
Likhachev, Igor A.
[7]
;
Pashaev, Elkhan M.
[7]
;
Souto, Sergio
[8]
;
Galvao Gobato, Yara
[1]
;
Avanco Galeti, Helder Vinicius
[9]
;
Henini, Mohamed
[2]
Total Authors: 15
|
| Affiliation: | [1] Univ Fed Sao Carlos, Phys Dept, Sao Carlos, SP - Brazil
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[3] Jouf Univ, Sch Phys, Coll Sci, Skaka 746317365 - Saudi Arabia
[4] Princess Nourah bint Abdulrahman Univ, Dept Phys, Coll Sci, Riyadh 11671 - Saudi Arabia
[5] Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia
[6] Klekovkin, Alexey, V, Russian Acad Sci, PN Lebedev Phys Inst, GSP-1, Moscow 119991 - Russia
[7] Kurchatov Inst, Natl Res Ctr, Moscow 123182 - Russia
[8] Univ Sao Paulo, FZEA ZAB, Pirassununga, SP - Brazil
[9] Univ Fed Sao Carlos, Elect Engn Dept, Sao Carlos, SP - Brazil
Total Affiliations: 9
|
| Document type: | Journal article |
| Source: | Semiconductor Science and Technology; v. 36, n. 7 JUL 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x = 5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction (XRD), micro-Raman at room temperature, and photoluminescence measurements as a function of temperature and laser excitation power (P (EXC)) were performed to investigate their structural and optical properties. XRD results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties. (AU) | |
| FAPESP's process: | 19/07442-5 - BISMIDES semiconductor nanostructures and novel materials for mid infrared applications |
| Grantee: | Helder Vinícius Avanço Galeti |
| Support type: | Regular Research Grants |
| FAPESP's process: | 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials |
| Grantee: | Yara Galvão Gobato |
| Support type: | Scholarships abroad - Research |