Electronic properties of InAs/EuS/Al hybrid nanowires

Autor(es)

Liu, Chun-Xiao ^{[1, 2]} ; Schuwalow, Sergej ^{[3, 4]} ; Liu, Yu ^{[3, 4]} ; Vilkelis, Kostas ^{[1, 2]} ; Manesco, A. L. R. ^{[1, 5]} ; Krogstrup, P. ^{[3, 4]} ; Wimmer, Michael ^{[1, 2]}

Afiliação do(s) autor(es)

^[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft - Netherlands

^[2] Delft Univ Technol, Qutech, NL-2600 GA Delft - Netherlands

^[3] Univ Copenhagen, Ctr Quantum Devices, Niels Bohr Inst, Lyngby - Denmark

^[4] Microsoft Quantum Mat Lab Copenhagen, Lyngby - Denmark

^[5] Univ Sao Paulo EEL USP, Mat Engn Dept Demar, Computat Mat Sci Grp ComputEEL, Escola Engn Lorena, Lorena, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Physical Review B; v. 104, n. 1 JUL 22 2021.
• Citações Web of Science: 0

Resumo

We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment {[}S. Vaitiekenas et al., Nat. Phys. 17, 43 (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations. (AU)

• Processo FAPESP: 19/07082-9 - Física de junções grafeno/supercondutor
• Beneficiário: Antonio Lucas Rigotti Manesco
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado Direto
• Processo FAPESP: 16/10167-8 - Investigação de propriedades eletrônicas e topológicas de heterojunções supercondutor-grafeno para aplicações em dispositivos de computação quântica
• Beneficiário: Antonio Lucas Rigotti Manesco
• Modalidade de apoio: Bolsas no Brasil - Doutorado Direto