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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Electronic properties of InAs/EuS/Al hybrid nanowires

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Author(s):
Liu, Chun-Xiao [1, 2] ; Schuwalow, Sergej [3, 4] ; Liu, Yu [3, 4] ; Vilkelis, Kostas [1, 2] ; Manesco, A. L. R. [1, 5] ; Krogstrup, P. [3, 4] ; Wimmer, Michael [1, 2]
Total Authors: 7
Affiliation:
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft - Netherlands
[2] Delft Univ Technol, Qutech, NL-2600 GA Delft - Netherlands
[3] Univ Copenhagen, Ctr Quantum Devices, Niels Bohr Inst, Lyngby - Denmark
[4] Microsoft Quantum Mat Lab Copenhagen, Lyngby - Denmark
[5] Univ Sao Paulo EEL USP, Mat Engn Dept Demar, Computat Mat Sci Grp ComputEEL, Escola Engn Lorena, Lorena, SP - Brazil
Total Affiliations: 5
Document type: Journal article
Source: Physical Review B; v. 104, n. 1 JUL 22 2021.
Web of Science Citations: 0
Abstract

We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment {[}S. Vaitiekenas et al., Nat. Phys. 17, 43 (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations. (AU)

FAPESP's process: 19/07082-9 - Physics of graphene/superconductor junctions
Grantee:Antonio Lucas Rigotti Manesco
Support type: Scholarships abroad - Research Internship - Doctorate (Direct)
FAPESP's process: 16/10167-8 - Investigation of electronic and topological properties of superconductor-graphene heterojunctions for applications in quantum computation devices
Grantee:Antonio Lucas Rigotti Manesco
Support type: Scholarships in Brazil - Doctorate (Direct)