High Electrical Anisotropic Multilayered Self-Assembled Organic Films Based on Graphene Oxide and PEDOT:PSS

Autor(es)

Gaal, Gabriel ^[1] ; Braunger, Maria Luisa ^[1] ; Rodrigues, Varlei ^[1] ; Riul, Antonio Jr Jr ; Gomes, Henrique Leonel ^[2]

Afiliação do(s) autor(es)

^[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil

^[2] Univ Coimbra, Inst Telecomunicacoes, Dept Engn Electrotecn & Comp, P-3030290 Coimbra - Portugal

• Tipo de documento: Artigo Científico
• Fonte: ADVANCED ELECTRONIC MATERIALS; v. 7, n. 8 AUG 2021.
• Citações Web of Science: 0

Resumo

Multilayered self-assembled structures having different constituents are very appealing for preparing novel materials with unusual electrical phenomena not observed on the individual sheets. Here, the fabrication and characterization of aligned multilayered architectures comprised of reduced graphene oxide (rGO) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), embedded into polymer electrolytes, are reported. The in-plane conductivity is five orders of magnitude higher than the cross-plane value, resulting in the highest anisotropic ratio reported to date for multilayer materials. Temperature-dependent measurements corroborate the high anisotropic electrical behavior, with charge transport weakly thermally activated (E-a = 33 meV) along the aligned conductive phases. Cross-plane charge transport fits well with the variable ranging hopping model, presenting an activation energy of 1.0 eV. Such a high anisotropic electrical behavior is explored in a novel transistor architecture where the anisotropic film operates simultaneously as a dielectric layer and as a transistor channel, with the cross-plane electric field modulating the in-plane conduction. The device shows ambipolar charge transport; however, the n-type carrier transport dominates the conduction with the field-effect mobility of 4.0 cm(2) V-1 s(-1). A simple and efficient way is presented to use electrical anisotropy to tailor transistors without a lattice mismatch at the dielectric/semiconductor interface. (AU)

• Processo FAPESP: 17/19862-3 - Estudo de filmes nanoestruturados condutores e self-healing para aplicação em eletrônica flexível
• Beneficiário: Gabriel Gaál
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 19/16249-4 - Estrutura Metal-Isolante-Metal Automontado para Aplicações em Sistemas de Memória Resistiva
• Beneficiário: Gabriel Gaál
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
• Processo FAPESP: 15/14836-9 - Aplicação da tecnologia de impressão 3D para desenvolvimentos microfluídicos
• Beneficiário: Maria Luisa Braunger Fier
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado