Electrical and optical properties of transition metal dichalcogenides on talc dielectrics

Autor(es)

Nutting, Darren ^[1] ; Prando, Gabriela A. ^{[1, 2]} ; Severijnen, Marion ^[3] ; Barcelos, Ingrid D. ^[4] ; Guo, Shi ^[1] ; Christianen, Peter C. M. ^[3] ; Zeitler, Uli ^[3] ; Gobato, Yara Galvao ^{[3, 2]} ; Withers, Freddie ^[1]

Afiliação do(s) autor(es)

^[1] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon - England

^[2] Univ Fed Sao Carlos, Phys Dept, Sao Carlos - Brazil

^[3] Radboud Univ Nijmegen, High Field Magnet Lab HFML EMFL, NL-6525 ED Nijmegen - Netherlands

^[4] Brazilian Ctr Res Energy & Mat, Brazilian Synchrotron Light Lab, Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: NANOSCALE; v. 13, n. 37 AUG 2021.
• Citações Web of Science: 0

Resumo

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices. (AU)

• Processo FAPESP: 19/23488-5 - Dispositivos optoeletrônicos baseados em semicondutores bidimensionais
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 18/00823-0 - Novos estados topológicos da matéria sob condições extremas
• Beneficiário: Ricardo Donizeth dos Reis
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
• Processo FAPESP: 18/01808-5 - Propriedades ópticas e de transporte em altos campos magnéticos de heteroestruturas e dispositivos semicondutores baseados em materiais bidimensionais (2d)
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Bolsas no Exterior - Pesquisa