Electrical and optical properties of transition metal dichalcogenides on talc dielectrics

Author(s)

Nutting, Darren ^[1] ; Prando, Gabriela A. ^{[1, 2]} ; Severijnen, Marion ^[3] ; Barcelos, Ingrid D. ^[4] ; Guo, Shi ^[1] ; Christianen, Peter C. M. ^[3] ; Zeitler, Uli ^[3] ; Gobato, Yara Galvao ^{[3, 2]} ; Withers, Freddie ^[1]

Affiliation

^[1] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon - England

^[2] Univ Fed Sao Carlos, Phys Dept, Sao Carlos - Brazil

^[3] Radboud Univ Nijmegen, High Field Magnet Lab HFML EMFL, NL-6525 ED Nijmegen - Netherlands

^[4] Brazilian Ctr Res Energy & Mat, Brazilian Synchrotron Light Lab, Campinas, SP - Brazil

• Document type: Journal article
• Source: NANOSCALE; v. 13, n. 37 AUG 2021.
• Web of Science Citations: 0

Abstract

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices. (AU)

• FAPESP's process: 19/23488-5 - 2D devices for optoeletronics
• Grantee: Yara Galvão Gobato
• Support Opportunities: Regular Research Grants
• FAPESP's process: 18/00823-0 - New topological states of matter under extreme conditions
• Grantee: Ricardo Donizeth dos Reis
• Support Opportunities: Research Grants - Young Investigators Grants
• FAPESP's process: 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials
• Grantee: Yara Galvão Gobato
• Support Opportunities: Scholarships abroad - Research