Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

Autor(es)

Ribeiro, Thales Augusto ^[1] ; Barraud, Sylvain ^[2] ; Pavanello, Marcelo Antonio ^[1]

Afiliação do(s) autor(es)

^[1] Ctr Univ FEI, Dept Elect Engn, BR-09850901 Sao Bernardo Do Campo - Brazil

^[2] Univ Grenoble Alpes, Minatec, LETI, CEA, F-38054 Grenoble - France

• Tipo de documento: Artigo Científico
• Fonte: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY; v. 9, p. 492-499, 2021.
• Citações Web of Science: 0

Resumo

This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices. (AU)

• Processo FAPESP: 16/10832-1 - Avaliação e modelagem do transporte de carga em transistores mos nanométricos para projeto de circuitos cmos
• Beneficiário: Thales Augusto Ribeiro
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular