Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

Author(s)

Ribeiro, Thales Augusto ^[1] ; Barraud, Sylvain ^[2] ; Pavanello, Marcelo Antonio ^[1]

Affiliation

^[1] Ctr Univ FEI, Dept Elect Engn, BR-09850901 Sao Bernardo Do Campo - Brazil

^[2] Univ Grenoble Alpes, Minatec, LETI, CEA, F-38054 Grenoble - France

• Document type: Journal article
• Source: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY; v. 9, p. 492-499, 2021.
• Web of Science Citations: 0

Abstract

This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices. (AU)

• FAPESP's process: 16/10832-1 - Evaluation and Modeling of Charge Transport in Nanometer MOSFETs for CMOS Circuit Design
• Grantee: Thales Augusto Ribeiro
• Support Opportunities: Scholarships in Brazil - Doctorate
• FAPESP's process: 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
• Grantee: Marcelo Antonio Pavanello
• Support Opportunities: Regular Research Grants