Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors

Autor(es)

Costa, Fernando J. ^[1] ; Trevisoli, Renan ^[2] ; Doria, Rodrigo T. ^[1]

Afiliação do(s) autor(es)

^[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo - Brazil

^[2] Univ Fed ABC, UFABC, Santo Andre, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Solid-State Electronics; v. 185, NOV 2021.
• Citações Web of Science: 0

Resumo

The focus of this work is to perform a first-time analysis of the thermal cross-coupling of a device on a neighbor one in advanced UTBB transistors through 3D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 mu m to 50 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device. (AU)

• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular