| Full text | |
| Author(s): |
Total Authors: 3
|
| Affiliation: | [1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo - Brazil
[2] Univ Fed ABC, UFABC, Santo Andre, SP - Brazil
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | Solid-State Electronics; v. 185, NOV 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
The focus of this work is to perform a first-time analysis of the thermal cross-coupling of a device on a neighbor one in advanced UTBB transistors through 3D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 mu m to 50 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device. (AU) | |
| FAPESP's process: | 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties |
| Grantee: | Marcelo Antonio Pavanello |
| Support Opportunities: | Regular Research Grants |