| Texto completo | |
| Autor(es): |
Mariniello, Genaro
[1]
;
de Carvalho, Cesar Augusto Belchior
[1]
;
Paz, Bruna Cardoso
[2, 3]
;
Barraud, Sylvain
[2, 3]
;
Vinet, Maud
[2, 3]
;
Faynot, Olivier
[2, 3]
;
Pavanello, Marcelo Antonio
[1]
Número total de Autores: 7
|
| Afiliação do(s) autor(es): | [1] Ctr Univ FEI, Av Humberto, AC Branco 3972, BR-09850901 Sao Bernardo Do Campo - Brazil
[2] MINATEC Campus, LETI, CEA, BR-38054 Grenoble 9 - Brazil
[3] Univ Grenoble Alpes, BR-38054 Grenoble 9 - Brazil
Número total de Afiliações: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Solid-State Electronics; v. 185, NOV 2021. |
| Citações Web of Science: | 0 |
| Resumo | |
This paper presents the fundamental analog figures of merit, such as the transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and harmonic distortion (or non-linearity), of ntype vertically stacked nanowires with variable fin width and channel length. To have a physical insight on the results, the basic electrical parameters such as threshold voltage, subthreshold slope and low field electron mobility of the analyzed transistors were also studied. The studied analog parameters are presented in function of the transconductance over drain current, to allow for the comparison at the same inversion level. (AU) | |
| Processo FAPESP: | 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS |
| Beneficiário: | Marcelo Antonio Pavanello |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |