| Texto completo | |
| Autor(es): |
da Costa, Fernando Jose
;
Trevisoli, Renan
;
Doria, Rodrigo Trevisoli
Número total de Autores: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Solid-State Electronics; v. 194, p. 5-pg., 2022-08-01. |
| Resumo | |
This work performs an analysis of the cross-coupling effects influence on the performance of current mirrors composed by advanced UTBB SOI MOSFETs through 3D numerical simulations validated to experimental data of single devices. It is shown the presence of a capacitive coupling acting in the system, which can be demonstrated through the threshold voltage reduction at small distances between devices. Additionally, the temperature rise in the system due to the thermal coupling provokes a decrease in the input current as the devices become closer to each other. This is responsible for an increase of 3 % on I-D2/I-D1 ratio when the devices are biased at the same time and when the distance between them is lowered to 100 nm. (AU) | |
| Processo FAPESP: | 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS |
| Beneficiário: | Marcelo Antonio Pavanello |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |