Analysis of p-type Junctionless Nanowire Transistors with Different Crystallographic Orientations

Autor(es)

Trevisoli, Renan ; Doria, Rodrigo T. ; de Souza, Michelly ; Pavanello, Marcelo A. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS; v. N/A, p. 4-pg., 2017-01-01.

Resumo

This work presents an analysis of the influence of the crystal orientation on the performance of p-type Junctionless Nanowire Transistors. The main electrical parameters, such as threshold voltage, transconductance and subthreshold slope, were analyzed by means of experimental data, demonstrating that the substrate rotation can significantly worsen the electrical behavior of these devices. (AU)

• Processo FAPESP: 14/18041-8 - Caracterização elétrica e modelagem de dispositivos eletrônicos avançados
• Beneficiário: Renan Trevisoli Doria
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado