| Autor(es): |
Piton, Marcelo R.
;
Koivusalo, Eero
;
Suomalainen, Soile
;
Hakkarainen, Teemu
;
Souto, S.
;
Galeti, Helder V. A.
;
Schramm, Andreas
;
Gobato, Y. Galvao
;
Guina, Mircea
;
IEEE
Número total de Autores: 10
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS; v. N/A, p. 4-pg., 2017-01-01. |
| Resumo | |
We have investigated optical and electrical properties of Te and Be doped GaAs nanowires (NW) grown by self-catalyzed molecular beam epitaxy. The NWs were grown on p-Si(111) substrates using a novel technique based on lithography-free Si/SiOx patterns fabricated by droplet epitaxy and spontaneous oxidation, which allows synthesis of highly uniform NWs with controllable size and density. The incorporation of Be- and Te-dopants in GaAs NWs was investigated by using transport, photoluminescence (PL) and Raman spectroscopy techniques. (AU) | |
| Processo FAPESP: | 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados |
| Beneficiário: | Helder Vinícius Avanço Galeti |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |