Chern-Simons diffusion rate across different phase transitions

Autor(es)

Rougemont, Romulo ; Finazzo, Stefano Ivo

• Tipo de documento: Artigo Científico
• Fonte: Physical Review D; v. 93, n. 10, p. 11-pg., 2016-05-24.

Resumo

We investigate how the dimensionless ratio given by the Chern-Simons diffusion rate Gamma(CS) divided by the product of the entropy density s and temperature T behaves across different kinds of phase transitions in the class of bottom-up nonconformal Einstein-dilaton holographic models originally proposed by Gubser and Nellore. By tuning the dilaton potential, one is able to holographically mimic a first order, a second order, or a crossover transition. In a first order phase transition, Gamma(CS)/sT jumps at the critical temperature (as previously found in the holographic literature), while in a second order phase transition it develops an infinite slope. On the other hand, in a crossover, Gamma(CS)/sT behaves smoothly, although displaying a fast variation around the pseudo-critical temperature. In all the cases, Gamma(CS)/sT increases with decreasing T. The behavior of the Chern-Simons diffusion rate across different phase transitions is expected to play a relevant role for the chiral magnetic effect around the QCD critical end point, which is a second order phase transition point connecting a crossover band to a line of first order phase transition. Our findings in the present work add to the literature the first predictions for the Chern-Simons diffusion rate across second order and crossover transitions in strongly coupled nonconformal, non-Abelian gauge theories. (AU)

• Processo FAPESP: 15/00240-7 - Aplicações da dualidade gauge/gravity a fenômenos não-perturbativos
• Beneficiário: Stefano Ivo Finazzo
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 13/04036-0 - Cálculo das propriedades do plasma de quarks e glúons a temperatura e densidade bariônica finitas via holografia
• Beneficiário: Rômulo Cesar Rougemont Pereira
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado