Non-linearity Analysis of Triple Gate SOI Nanowires MOSFETS

Autor(es)

Paz, Bruna Cardoso ; Doria, Rodrigo Trevisoli ; Casse, Mikael ; Barraud, Sylvain ; Reimbold, Gilles ; Vinet, Maud ; Faynot, Olivier ; Pavanello, Marcelo Antonio ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO); v. N/A, p. 4-pg., 2016-01-01.

Resumo

This work aims to explore the harmonic distortion of triple gate SOI nanowires MOSFETs, considering long channel devices operating in saturation regime as amplifiers. The Integral Function Method is used to extract the total, second and third order harmonic distortions, which are the main figures of merit analyzed in this work. Low field mobility, surface roughness scattering and series resistance are correlated to the distortion minima. Narrower devices have shown improved linearity. (AU)

• Processo FAPESP: 15/10491-7 - Caracterização elétrica e simulação tridimensional de nanofios transistores MOS
• Beneficiário: Bruna Cardoso Paz
• Modalidade de apoio: Bolsas no Brasil - Doutorado