Thermal Cross-Coupling Effects Analysis in UTBB Transistors

Autor(es)

Costa, Fernando J. ; Trevisoli, Renan ; Doria, Rodrigo T. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 4-pg., 2020-01-01.

Resumo

The main goal of this work is to perform an analysis for the first time of the thermal cross-coupling of a self-heated device on a neighbor device in advanced UTBB SOI MOSFETs through 2D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the self-heating of a device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 mu m to 25 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase of more than 50% in the thermal resistance. (AU)

• Processo FAPESP: 14/18041-8 - Caracterização elétrica e modelagem de dispositivos eletrônicos avançados
• Beneficiário: Renan Trevisoli Doria
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado