Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

Autor(es)

de Andrade, Maria Gloria Cano ; Nogueira, Carlos Roberto ; Graciano Junior, Nilton ; Doria, Rodrigo T. ; Trevisoli, Renan ; Simoen, Eddy

• Tipo de documento: Artigo Científico
• Fonte: Solid-State Electronics; v. 211, p. 5-pg., 2023-11-09.

Resumo

The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on (111) silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and DrainInduced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0 degrees, 90 degrees and 45 degrees). (AU)

• Processo FAPESP: 23/00123-7 - Simulação TCAD de dispositivos semicondutores avançados
• Beneficiário: Maria Glória Caño de Andrade
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 23/08068-5 - INFOS 2023 - Conferência de Filmes Isolantes em Semicondutores
• Beneficiário: Renan Trevisoli Doria
• Modalidade de apoio: Auxílio à Pesquisa - Reunião - Exterior
• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular