| Texto completo | |
| Autor(es): |
Souto, S.
;
Hilska, J.
;
Gobato, Y. Galvao
;
Souza, D.
;
Andrade, M. B.
;
Koivusalo, E.
;
Puustinen, J.
;
Guina, M.
Número total de Autores: 8
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Applied Physics Letters; v. 116, n. 20, p. 5-pg., 2020-05-18. |
| Resumo | |
We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to similar to 0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532nm, 633nm, and 785nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bi-n clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks. (AU) | |
| Processo FAPESP: | 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados |
| Beneficiário: | Helder Vinícius Avanço Galeti |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |