ZnO extended-gate field-effect transistors as pH sensors

Autor(es)

Batista‚ PD ; Mulato‚ M.

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 87, p. 143508, 2005.

Resumo

The objective of this work is the study and characterization of zinc oxide (ZnO) as pH sensor. We used an extended-gate field-effect transistor (EGFET) to obtain the response of ZnO as a function of pH. Sol-gel was used for the production of ZnO films because this is a low cost and easy fabrication procedure. The ZnO powder was obtained at different temperatures of calcination, from 150 up to 500°C. The samples were investigated by x-ray diffraction, infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. The films were investigated as pH sensors (range 2–12) and the ZnO EGFET shows a sensitivity of 38mV∕pH. (AU)

• Processo FAPESP: 01/08221-9 - Biossensores e/ou sensores aplicados à medicina e biologia
• Beneficiário: Marcelo Mulato
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
• Processo FAPESP: 03/08471-0 - Bio-sensores de ph, ureia e glicose a partir de dispositivos capacitivos e de efeito de campo.
• Beneficiário: Pablo Diniz Batista
• Modalidade de apoio: Bolsas no Brasil - Doutorado