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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Texto completo
Autor(es):
Amorim, C. A. [1] ; Cavallari, M. R. [2] ; Santos, G. [2] ; Fonseca, F. J. [2] ; Andrade, A. M. [3] ; Mergulhao, S. [1]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Univ Fed Sao Carlos, Dept Fis, Sao Carlos, SP - Brazil
[2] Univ Sao Paulo, Escola Politecn, BR-09500900 Sao Paulo - Brazil
[3] Univ Sao Paulo, Inst Eletrotecn & Energia, BR-09500900 Sao Paulo - Brazil
Número total de Afiliações: 3
Tipo de documento: Artigo Científico
Fonte: Journal of Non-Crystalline Solids; v. 358, n. 3, p. 484-491, FEB 1 2012.
Citações Web of Science: 42
Resumo

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved. (AU)

Processo FAPESP: 07/06064-0 - Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos
Beneficiário:Marco Roberto Cavallari
Linha de fomento: Bolsas no Brasil - Mestrado
Processo FAPESP: 09/05589-7 - Estudo e desenvolvimento de LEDs orgânicos, células solares, transistores de filmes finos e sensores baseados em polímeros semicondutores
Beneficiário:Adnei Melges de Andrade
Linha de fomento: Auxílio à Pesquisa - Regular