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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Simulation of the electronic properties of InxGa1-xAs quantum dots and their wetting layer under the influence of indium segregation

Texto completo
Autor(es):
Maia, A. D. B. [1] ; da Silva, E. C. F. [1] ; Quivy, A. A. [1] ; Bindilatti, V. [1] ; de Aquino, V. M. [2] ; Dias, I. F. L. [2]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Univ Sao Paulo, Inst Fis, BR-05314970 Sao Paulo - Brazil
[2] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, PR - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: Journal of Applied Physics; v. 114, n. 8 AUG 28 2013.
Citações Web of Science: 8
Resumo

We present anisotropic nonparabolic position-dependent effective-mass calculations of the bound energy levels of electrons confined in lens-shaped InxGa1-xAs quantum dots embedded in a GaAs matrix. The strain and In gradient inside the quantum dots and their wetting layer (due to the strong In segregation effect present in the InxGa1-xAs/GaAs system) were taken into account. The bound eigenstates and eigenenergies of electrons in a finite 3D confinement potential were determined by the full numerical diagonalization of the Hamiltonian. The quantum dots and their wetting layer were sliced into a finite number of monolayers parallel to the substrate surface, each one with a specific In concentration, in order to be able to reproduce any composition profile along the growth direction. A comparison between the eigenenergies of the ``pure{''} InAs quantum dots and the quantum dots with an inhomogeneous In content indicates that In segregation dramatically affects their electronic structure and must be taken into account if one wishes to accurately simulate the real optoelectronic properties of such nanostructures. (C) 2013 AIP Publishing LLC. (AU)

Processo FAPESP: 08/00841-7 - Responsividade e ruído de fotodetectores infravermelhos baseados em poços e pontos quânticos crescidos por epitaxia de feixe molecular
Beneficiário:Alain André Quivy
Linha de fomento: Auxílio à Pesquisa - Regular